Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

Manikandan, V, Marnadu, R, Chandrasekaran, J, Vigneselvan, S, Mane, RS, Banks, CE ORCID: https://orcid.org/0000-0002-0756-9764 and Mirzaei, A (2022) Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes. Journal of Materials Chemistry C, 10 (4). pp. 1445-1457. ISSN 2050-7526

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Abstract

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2 thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process. Phase identification revealed a good arrangement of atoms in the as-prepared nanostructured thin films via structural analysis. The formation of wire-shaped nanorods was confirmed. Elemental distribution and their valence states were systematically monitored using X-ray photoelectron spectroscopy analysis, where the presence of Ce3+ was evidenced. Good mechanical properties were obtained owing to the Cu-doping in the cerium host matrix, which was investigated by nano-indentation. Bandgap energy fluctuation was the root cause for electrical conductivity. The present work revealed a decrease in the band gap energy upon Cu-doping alters the electrical conductivity. An as-fabricated photodiode demonstrated superior detectability upon Cu-doping. In the depletion region, on account of a high surface-to-volume ratio, the generation of electron-hole pairs increased along with photoresponsivity with increases in the quantum efficiency and current gain.