Raman characterisation of boron-doped multiwalled carbon nanotubes

Birkett, Paul R., Maultzsch, J., Riech, S., Thomsen, C., Webster, S., Czerw, R., Carroll, D. L., Vieira, S. M. C. and Rego, Chris A. (2002) Raman characterisation of boron-doped multiwalled carbon nanotubes. Applied physics letters, 81 (14). pp. 2647-2649. ISSN 1077-3118

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Abstract

We present first- and second-order Raman spectra of boron-doped multiwalled carbon nanotubes. The Raman intensities are analyzed as a function of the nominal boron concentration. The intensities of both the D mode and the high-energy mode in the first-order spectra increase with increasing boron concentration, if normalized with respect to a second-order mode. We interpret this result as an indication that the high-energy mode in carbon nanotubes is defect-induced in a similar way as the D mode. Based on this result, we provide a preliminary quantitative relation between the boron concentration and the Raman intensity ratios.

Item Type:	Article
Peer-reviewed:	No
Date Deposited:	10 Jul 2009 08:37
Publisher:	American Institute of Physics
Additional Information:	Full-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.
Divisions:	Faculties > Science and Engineering
URI:	https://e-space.mmu.ac.uk/id/eprint/73214
DOI:	https://doi.org/10.1063/1.1512330
ISSN	1077-3118

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