An rf approach to modelling gallium nitride power devices using parasitic extraction

Hari, N, Ramasamy, S, Ahsan, M ORCID: https://orcid.org/0000-0002-7300-506X, Haider, J ORCID: https://orcid.org/0000-0001-7010-8285 and Rodrigues, EMG (2020) An rf approach to modelling gallium nitride power devices using parasitic extraction. Electronics, 9 (12). pp. 1-19. ISSN 0883-4989

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Abstract

© 2020 by the authors. Licensee MDPI, Basel, Switzerland. This paper begins with a comprehensive review into the existing GaN device models. Secondly, it identifies the need for a more accurate GaN switching model. A simple practical process based on radio frequency techniques using vector network analyser is introduced in this paper as an original contribution. It was applied to extract the impedances of the GaN device to develop an efficient behavioural model. The switching behaviour of the model was validated using both simulation and real time double pulse test experiments at 500 V, 15 A conditions. The proposed model is much easier for power designers to handle, without the need for knowledge about the physics or geometry of the device. The proposed model for Transphorm GaN HEMT was found to be 95.2% more accurate when compared to the existing LT-spice manufacturer model. This work additionally highlights the need to adopt established RF techniques into power electronics to reduce the learning curve while dealing with these novel high-speed switching devices.