Items where Author is "Donnelly, Steve E."

Article

Donnelly, Steve E. and Birtcher, R. C. and Vishnyakov, Vladimir and Edmondson, P. D. and Carter, G. (2006) Anomalous annealing behavior of isolated amorphous zones in silicon. ISSN 1872-9584

Gandy, A. S. and Donnelly, Steve E. and Beaufort, M.-F. and Vishnyakov, Vladimir and Barbot, J.-F. (2006) The effect of ion-beam specimen preparation techniques on vacancy-type defects in silicon. ISSN 1872-9584

Colligon, John and Vishnyakov, Vladimir and Valizadeh, Reza and Donnelly, Steve E. and Kumashiro, S. (2005) Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam method. ISSN 0040-6090

Zhang, C. H. and Donnelly, Steve E. and Vishnyakov, Vladimir and Evans, J. H. (2003) Dose dependence of formation of nanoscale cavities in helium-implanted 4H–SiC. Journal of applied physics, 94 (9). 6017-6022.. ISSN 0021-8979

Vishnyakov, Vladimir and Donnelly, Steve E. and Carter, G. (2003) The influence of impurities on the growth of helium-induced cavities in silicon. Journal of applied physics, 94 (1). 238 - 244.. ISSN 0021-8979