Items where Author is "Donnelly, Steve E."
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Donnelly, Steve E. and Birtcher, R. C. and Vishnyakov, Vladimir and Edmondson, P. D. and Carter, G. (2006) Anomalous annealing behavior of isolated amorphous zones in silicon. ISSN 1872-9584
Gandy, A. S. and Donnelly, Steve E. and Beaufort, M.-F. and Vishnyakov, Vladimir and Barbot, J.-F. (2006) The effect of ion-beam specimen preparation techniques on vacancy-type defects in silicon. ISSN 1872-9584
Colligon, John and Vishnyakov, Vladimir and Valizadeh, Reza and Donnelly, Steve E. and Kumashiro, S. (2005) Study of nanocrystalline TiN/Si3N4 thin films deposited using a dual ion beam method. ISSN 0040-6090
Zhang, C. H. and Donnelly, Steve E. and Vishnyakov, Vladimir and Evans, J. H. (2003) Dose dependence of formation of nanoscale cavities in helium-implanted 4H–SiC. Journal of applied physics, 94 (9). 6017-6022.. ISSN 0021-8979
Vishnyakov, Vladimir and Donnelly, Steve E. and Carter, G. (2003) The influence of impurities on the growth of helium-induced cavities in silicon. Journal of applied physics, 94 (1). 238 - 244.. ISSN 0021-8979