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Photonic crystal thin films of GaAs prepared by atomic layer deposition

Povey, I. M. and Whitehead, Debra and Thomas, K. and Pemble, Martyn and Bardosova, M. and Renard, J. (2006) Photonic crystal thin films of GaAs prepared by atomic layer deposition. Applied physics letters, 89 (10). 104-103.. ISSN 0003-6951

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Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

Item Type: Article
Additional Information: Full-text of this article is not available in this e-prints service. This article was originally published [following peer-review] in Applied Physics Letters, published by and copyright American Institute of Physics.
Divisions: Faculties > Faculty of Science and Engineering > Centre for Materials Science Research: Surface Coating and Characterisation Research Group
DOI: 10.1063/1.2345359
Date Deposited: 07 Sep 2010 10:50
Last Modified: 28 Nov 2016 11:57
URI: http://e-space.mmu.ac.uk/id/eprint/110788

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